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| Silicon Tuning Diode BB 835 Preliminary data Features q Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio q Type BB 835 Marking yellow X Ordering Code (tape and reel) Q62702-B802 Pin Configuration 1 C 2 A Package SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient 1) Rth JA Symbol VR Values 30 35 20 - 55... +150 - 55... +150 450 Unit V V mA C C (R 5 k) VRM IF TOP Tstg K/W 1) For detailed informatioon see chapter Package Outline Semiconductor Group 1 04.96 BB 835 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1...28 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Series inductance Diode capacitance CT = f (VR) f = 1 MHz. IR Value typ. max. Unit nA - - - - 9.1 0.62 14.7 - 2.4 1.4 10 200 pF 8.5 0.5 10 0.75 - 13.5 - % - 3 - - - nH - CT CT1/CT28 CT/CT rS LS Semiconductor Group 2 |
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